Relationship between gallium concentration and resistivity of gallium-doped czochralski silicon crystals: Investigation of a conversion curve

Takeshi Hoshikawa; Xinming Huang; Keigo Hoshikawa; Satoshi Uda

doi:10.1143/JJAP.47.8691

Relationship between gallium concentration and resistivity of gallium-doped czochralski silicon crystals: Investigation of a conversion curve

Takeshi Hoshikawa, Xinming Huang, Keigo Hoshikawa, Satoshi Uda

研究成果: Article › 査読

5 被引用数 (Scopus)

抄録

The relationship between gallium (Ga) concentration and resistivity was studied in Ga-doped Czochralski (CZ) silicon (Si) single crystals in the dopant concentration range from 1 × 10¹⁴ to 2 × 10¹⁸ atoms/cm³ by the four-point probe method, inductively coupled plasma (ICP) analysis, and Hall-effect measurement. The resistivity of Ga-doped Si was found to be larger than that of B-doped Si, because Ga is not fully ionized at Ga concentrations higher than 10¹⁶ atoms/cm³ at 300 K. A conversion curve from resistivity to Ga concentration in the range from 1 × 10¹⁴ to 1 × 10¹⁷ atoms/cm³ is proposed.

本文言語	English
ページ（範囲）	8691-8695
ページ数	5
ジャーナル	Japanese journal of applied physics
巻	47
号	12
DOI	https://doi.org/10.1143/JJAP.47.8691
出版ステータス	Published - 2008 12月 19
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

文献へのアクセス

10.1143/JJAP.47.8691

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引用スタイル

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title = "Relationship between gallium concentration and resistivity of gallium-doped czochralski silicon crystals: Investigation of a conversion curve",

abstract = "The relationship between gallium (Ga) concentration and resistivity was studied in Ga-doped Czochralski (CZ) silicon (Si) single crystals in the dopant concentration range from 1 × 1014 to 2 × 1018 atoms/cm3 by the four-point probe method, inductively coupled plasma (ICP) analysis, and Hall-effect measurement. The resistivity of Ga-doped Si was found to be larger than that of B-doped Si, because Ga is not fully ionized at Ga concentrations higher than 1016 atoms/cm3 at 300 K. A conversion curve from resistivity to Ga concentration in the range from 1 × 1014 to 1 × 1017 atoms/cm3 is proposed.",

keywords = "Acceptor concentration, CZ-si crystal, Conductivity mobility, Conversion curve, Ga concentration, Ga-doped silicon, Resistivity, Solar cell",

author = "Takeshi Hoshikawa and Xinming Huang and Keigo Hoshikawa and Satoshi Uda",

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T2 - Investigation of a conversion curve

AU - Hoshikawa, Takeshi

AU - Huang, Xinming

AU - Hoshikawa, Keigo

AU - Uda, Satoshi

PY - 2008/12/19

Y1 - 2008/12/19

N2 - The relationship between gallium (Ga) concentration and resistivity was studied in Ga-doped Czochralski (CZ) silicon (Si) single crystals in the dopant concentration range from 1 × 1014 to 2 × 1018 atoms/cm3 by the four-point probe method, inductively coupled plasma (ICP) analysis, and Hall-effect measurement. The resistivity of Ga-doped Si was found to be larger than that of B-doped Si, because Ga is not fully ionized at Ga concentrations higher than 1016 atoms/cm3 at 300 K. A conversion curve from resistivity to Ga concentration in the range from 1 × 1014 to 1 × 1017 atoms/cm3 is proposed.

AB - The relationship between gallium (Ga) concentration and resistivity was studied in Ga-doped Czochralski (CZ) silicon (Si) single crystals in the dopant concentration range from 1 × 1014 to 2 × 1018 atoms/cm3 by the four-point probe method, inductively coupled plasma (ICP) analysis, and Hall-effect measurement. The resistivity of Ga-doped Si was found to be larger than that of B-doped Si, because Ga is not fully ionized at Ga concentrations higher than 1016 atoms/cm3 at 300 K. A conversion curve from resistivity to Ga concentration in the range from 1 × 1014 to 1 × 1017 atoms/cm3 is proposed.

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