The relationship between gallium (Ga) concentration and resistivity was studied in Ga-doped Czochralski (CZ) silicon (Si) single crystals in the dopant concentration range from 1 × 1014 to 2 × 1018 atoms/cm3 by the four-point probe method, inductively coupled plasma (ICP) analysis, and Hall-effect measurement. The resistivity of Ga-doped Si was found to be larger than that of B-doped Si, because Ga is not fully ionized at Ga concentrations higher than 1016 atoms/cm3 at 300 K. A conversion curve from resistivity to Ga concentration in the range from 1 × 1014 to 1 × 1017 atoms/cm3 is proposed.
|ジャーナル||Japanese journal of applied physics|
|出版ステータス||Published - 2008 12月 19|
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