Resistive switching behaviors of ReRAM having W/CeO2/Si/TiN structures

C. Dou; K. Mukai; K. Kakushima; P. Ahmet; K. Tsutsui; A. Nishiyama; N. Sugii; K. Natori; T. Hattori; H. Iwai

doi:10.1149/1.3572307

Resistive switching behaviors of ReRAM having W/CeO₂/Si/TiN structures

C. Dou, K. Mukai, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

As one of emerging next-generation nonvolatile memories, Resistive RAM (ReRAM) still calls new material technology to improve its performance. By utilizing the special characteristics of cerium oxides, this paper proposes a new method to improve the performance of CeO₂ based ReRAM devices by using Si buffer layer. It is confirmed that the device having W/CeO ₂/Si/TiN structure shows significant advantage over the device without Si layer for memory application in terms of lower forming voltage, smaller compliance current, larger window and better endurance characteristic. The effect of Si buffer layer is discussed in detail and a model based on filament switching mechanism was also proposed to explain the underlying reasons.

本文言語	English
ホスト出版物のタイトル	Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
出版社	Electrochemical Society Inc.
ページ	597-603
ページ数	7
版	4
ISBN（電子版）	9781607682158
ISBN（印刷版）	9781566778657
DOI	https://doi.org/10.1149/1.3572307
出版ステータス	Published - 2011
外部発表	はい

出版物シリーズ

名前	ECS Transactions
番号	4
巻	35
ISSN（印刷版）	1938-5862
ISSN（電子版）	1938-6737

ASJC Scopus subject areas

工学（全般）

文献へのアクセス

10.1149/1.3572307

他のファイルとリンク

引用スタイル

Dou, C., Mukai, K., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., & Iwai, H. (2011). Resistive switching behaviors of ReRAM having W/CeO₂/Si/TiN structures. In Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 (4 ed., pp. 597-603). (ECS Transactions; Vol. 35, No. 4). Electrochemical Society Inc.. https://doi.org/10.1149/1.3572307

Dou, C, Mukai, K, Kakushima, K, Ahmet, P, Tsutsui, K, Nishiyama, A, Sugii, N, Natori, K, Hattori, T & Iwai, H 2011, Resistive switching behaviors of ReRAM having W/CeO₂/Si/TiN structures. in Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11. 4 edn, ECS Transactions, no. 4, vol. 35, Electrochemical Society Inc., pp. 597-603. https://doi.org/10.1149/1.3572307

@inproceedings{82388bdb9a0a4095ad474b31dc314d55,

title = "Resistive switching behaviors of ReRAM having W/CeO2/Si/TiN structures",

abstract = "As one of emerging next-generation nonvolatile memories, Resistive RAM (ReRAM) still calls new material technology to improve its performance. By utilizing the special characteristics of cerium oxides, this paper proposes a new method to improve the performance of CeO2 based ReRAM devices by using Si buffer layer. It is confirmed that the device having W/CeO 2/Si/TiN structure shows significant advantage over the device without Si layer for memory application in terms of lower forming voltage, smaller compliance current, larger window and better endurance characteristic. The effect of Si buffer layer is discussed in detail and a model based on filament switching mechanism was also proposed to explain the underlying reasons.",

author = "C. Dou and K. Mukai and K. Kakushima and P. Ahmet and K. Tsutsui and A. Nishiyama and N. Sugii and K. Natori and T. Hattori and H. Iwai",

year = "2011",

doi = "10.1149/1.3572307",

language = "English",

isbn = "9781566778657",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "4",

pages = "597--603",

booktitle = "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11",

edition = "4",

}

TY - GEN

T1 - Resistive switching behaviors of ReRAM having W/CeO2/Si/TiN structures

AU - Dou, C.

AU - Mukai, K.

AU - Kakushima, K.

AU - Ahmet, P.

AU - Tsutsui, K.

AU - Nishiyama, A.

AU - Sugii, N.

AU - Natori, K.

AU - Hattori, T.

AU - Iwai, H.

PY - 2011

Y1 - 2011

N2 - As one of emerging next-generation nonvolatile memories, Resistive RAM (ReRAM) still calls new material technology to improve its performance. By utilizing the special characteristics of cerium oxides, this paper proposes a new method to improve the performance of CeO2 based ReRAM devices by using Si buffer layer. It is confirmed that the device having W/CeO 2/Si/TiN structure shows significant advantage over the device without Si layer for memory application in terms of lower forming voltage, smaller compliance current, larger window and better endurance characteristic. The effect of Si buffer layer is discussed in detail and a model based on filament switching mechanism was also proposed to explain the underlying reasons.

AB - As one of emerging next-generation nonvolatile memories, Resistive RAM (ReRAM) still calls new material technology to improve its performance. By utilizing the special characteristics of cerium oxides, this paper proposes a new method to improve the performance of CeO2 based ReRAM devices by using Si buffer layer. It is confirmed that the device having W/CeO 2/Si/TiN structure shows significant advantage over the device without Si layer for memory application in terms of lower forming voltage, smaller compliance current, larger window and better endurance characteristic. The effect of Si buffer layer is discussed in detail and a model based on filament switching mechanism was also proposed to explain the underlying reasons.

UR - http://www.scopus.com/inward/record.url?scp=79960885592&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79960885592&partnerID=8YFLogxK

U2 - 10.1149/1.3572307

DO - 10.1149/1.3572307

M3 - Conference contribution

AN - SCOPUS:79960885592

SN - 9781566778657

T3 - ECS Transactions

SP - 597

EP - 603

BT - Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11

PB - Electrochemical Society Inc.

ER -