Resistivity reduction by external oxidation of Cu-Mn alloy films for semiconductor interconnect application

J. Iijima, Y. Fujii, K. Neishi, J. Koike

研究成果: ジャーナルへの寄稿学術論文査読

46 被引用数 (Scopus)

抄録

A self-forming barrier process using Cu-Mn alloy has been reported to exhibit excellent reliability for interconnect lines in advanced semiconductor devices. However, Mn increases resistivity. In this work, the authors investigated optimum annealing conditions to remove Mn from the Cu-Mn alloy by forming an external Mn oxide and to reduce resistivity to a level of pure Cu. The results were interpreted by an external oxidation mechanism of Mn atoms.

本文言語英語
ページ(範囲)1963-1968
ページ数6
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
27
4
DOI
出版ステータス出版済み - 2009

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