Room-temperature bonding of AlN ceramic and Si semiconductor substrates for improved thermal management

Takashi Matsumae, Yuichi Kurashima, Hideki Takagi, Kazunori Nishizono, Tsutomu Amano, Eiji Higurashi

研究成果: 書籍の章/レポート/Proceedings会議への寄与査読

5 被引用数 (Scopus)

抄録

An AlN ceramic substrate was bonded with a Si substrate by using a surface activated bonding method for advanced thermal management. When the sputtered surfaces were directly bonded, the bonding strength was ~1 J/m2. However, when the bonding process was modified to provide a Si adhesion layer with a thickness of 1.5 nm on the AlN surface, the adhesion strength become equivalent to 2.5 J/m2. As a device substrate can be integrated on the heat dissipation broad consisting of AlN through atomically thin bonding layer, the proposed bonding technique would facilitate efficient cooling system for future high power electronic devices.

本文言語英語
ホスト出版物のタイトル2021 International Conference on Electronics Packaging, ICEP 2021
出版社Institute of Electrical and Electronics Engineers Inc.
ページ65-66
ページ数2
ISBN(電子版)9784991191114
DOI
出版ステータス出版済み - 2021 5月 12
イベント20th International Conference on Electronics Packaging, ICEP 2021 - Tokyo, 日本
継続期間: 2021 5月 122021 5月 14

出版物シリーズ

名前2021 International Conference on Electronics Packaging, ICEP 2021

会議

会議20th International Conference on Electronics Packaging, ICEP 2021
国/地域日本
CityTokyo
Period21/5/1221/5/14

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