Room-Temperature Wafer Bonding with Titanium Thin Films Based on Formation of Ti/Si Amorphous Layers

Eiji Higurashi, Hayato Azuma, Michitaka Yamamoto, Takeshi Matsumae, Yuichi Kurashima, Hideki Takagi, Tadatomo Suga

研究成果: 書籍の章/レポート/Proceedings会議への寄与査読

抄録

Silicon wafers with Ti thin films (thickness: 40 nm) covered with Au thin films (thickness: 4 nm) as passivation layers were bonded at room temperature by surface activated bonding. Bonding was performed immediately after removing the Au passivation layers and deposition of Si nanolayers by Ar fast atom beam irradiation. Amorphous Ti/Si layers formed at the bonding interfaces, and strong void-free bonding was achieved.

本文言語英語
ホスト出版物のタイトルProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ページ84
ページ数1
ISBN(電子版)9784904743072
DOI
出版ステータス出版済み - 2019 5月
イベント6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, 日本
継続期間: 2019 5月 212019 5月 25

出版物シリーズ

名前Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

会議

会議6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
国/地域日本
CityKanazawa, Ishikawa
Period19/5/2119/5/25

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