TY - JOUR
T1 - Schottky barrier height in Fe/GaAs films
AU - Fleet, L. R.
AU - Yoshida, K.
AU - Kobayashi, H.
AU - Ohno, Y.
AU - Kurebayashi, H.
AU - Kim, J. Y.
AU - Barnes, C. H.W.
AU - Hirohata, A.
N1 - Funding Information:
ACKNOWLEDGMENT The authors wish to acknowledge the helpful discussions with Prof. K. O’Grady of the University of York. The authors would also like to acknowledge Dr. S. Matsuzaka from the RIEC for his help in obtaining the I-V-T data and particularly to Prof. H. Ohno for allowing the use of the RIEC facilities. This work was supported by the EPSRC and the JST.
PY - 2010/6
Y1 - 2010/6
N2 - We discuss the effect of annealing on the interfacial structure of Fe/GaAs films, with 2× 4 surface reconstructions, and the subsequent effect on the Schottky barrier height. Images of the interfaces indicate that the annealing process can greatly reduce the level of atomic mixing. A study of the I-V characteristics of Fe/GaAs Schottky barrier diodes, in a wide temperature range of 10300 K, reveals a strong temperature dependence for the unannealed case, arising from the presence of mixed surface states. The annealing process reduces the existence of the interfacial states, leading to more ideal behavior, with a reduced temperature dependence of the Schottky behavior.
AB - We discuss the effect of annealing on the interfacial structure of Fe/GaAs films, with 2× 4 surface reconstructions, and the subsequent effect on the Schottky barrier height. Images of the interfaces indicate that the annealing process can greatly reduce the level of atomic mixing. A study of the I-V characteristics of Fe/GaAs Schottky barrier diodes, in a wide temperature range of 10300 K, reveals a strong temperature dependence for the unannealed case, arising from the presence of mixed surface states. The annealing process reduces the existence of the interfacial states, leading to more ideal behavior, with a reduced temperature dependence of the Schottky behavior.
KW - Fe
KW - GaAs and Schottky barrier
KW - Spin-polarized injection
KW - Spintronics
UR - http://www.scopus.com/inward/record.url?scp=77952801324&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77952801324&partnerID=8YFLogxK
U2 - 10.1109/TMAG.2010.2045483
DO - 10.1109/TMAG.2010.2045483
M3 - Article
AN - SCOPUS:77952801324
SN - 0018-9464
VL - 46
SP - 1737
EP - 1740
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
IS - 6
M1 - 5467484
ER -