TY - JOUR
T1 - Segregation of Ga during growth of Si single crystal
AU - Hoshikawa, Takeshi
AU - Huang, Xinming
AU - Uda, Satoshi
AU - Taishi, Toshinori
PY - 2006/5/1
Y1 - 2006/5/1
N2 - Segregation phenomenon of Ga in Czochralski (CZ)-Si crystal growth has been investigated. The effective segregation coefficient, keff, of Ga was obtained for different growth rates by assuming the simple relationship between the concentration of Ga in Si crystal and the bulk Ga concentration in melt. Applying BPS theory to effective segregation coefficients which is valid for the melt-solidified fraction up to 0.38, an equilibrium segregation coefficient of Ga was obtained, k0=0.0079.
AB - Segregation phenomenon of Ga in Czochralski (CZ)-Si crystal growth has been investigated. The effective segregation coefficient, keff, of Ga was obtained for different growth rates by assuming the simple relationship between the concentration of Ga in Si crystal and the bulk Ga concentration in melt. Applying BPS theory to effective segregation coefficients which is valid for the melt-solidified fraction up to 0.38, an equilibrium segregation coefficient of Ga was obtained, k0=0.0079.
KW - A1. Ga-doping
KW - A1. Segregation
KW - A2. Czochralski method
KW - A2. Si crystal
UR - http://www.scopus.com/inward/record.url?scp=33646364071&partnerID=8YFLogxK
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U2 - 10.1016/j.jcrysgro.2006.01.026
DO - 10.1016/j.jcrysgro.2006.01.026
M3 - Article
AN - SCOPUS:33646364071
SN - 0022-0248
VL - 290
SP - 338
EP - 340
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 2
ER -