TY - JOUR
T1 - Self-organized (In, Mn)As diluted magnetic semiconductor nanostructures on GaAs substrates
AU - Guo, S. P.
AU - Ohno, H.
AU - Shen, A.
AU - Matsukura, F.
AU - Ohno, Y.
N1 - Funding Information:
Part of this work was supported by the `Research for the Future' Program from the Japan Society for the Promotion of Science (JSPS-RFTF97P00202) and by a Grant-in-Aid for Scientific Research on Priority Area (No. 09244103) from the Ministry of Education, Science, Sports and Culture, Japan.
PY - 1998
Y1 - 1998
N2 - We have grown (In,Mn)As quantum dots (QDs) on GaAs (100), (211)B and (311)B substrates. The observation of reflection high energy electron diffraction pattern and atomic force microscopy measurement confirmed the formation of the (In,Mn)As QDs. The structure grown on GaAs (100) showed a broad range of dot sizes with irregular shape. For the structure grown on GaAs (311)B, (In,Mn)As QDs with bimodal size distribution were observed. The (In,Mn)As QDs grown on GaAs (211)B showed improved size uniformity compared to those grown on GaAs (100) and (311)B. The effect of Mn as a surfactant on InAs nanostructures was also studied.
AB - We have grown (In,Mn)As quantum dots (QDs) on GaAs (100), (211)B and (311)B substrates. The observation of reflection high energy electron diffraction pattern and atomic force microscopy measurement confirmed the formation of the (In,Mn)As QDs. The structure grown on GaAs (100) showed a broad range of dot sizes with irregular shape. For the structure grown on GaAs (311)B, (In,Mn)As QDs with bimodal size distribution were observed. The (In,Mn)As QDs grown on GaAs (211)B showed improved size uniformity compared to those grown on GaAs (100) and (311)B. The effect of Mn as a surfactant on InAs nanostructures was also studied.
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U2 - 10.1016/S0169-4332(98)00157-3
DO - 10.1016/S0169-4332(98)00157-3
M3 - Conference article
AN - SCOPUS:17544385969
SN - 0169-4332
VL - 130-132
SP - 797
EP - 802
JO - Applied Surface Science
JF - Applied Surface Science
T2 - Proceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4
Y2 - 27 October 1997 through 30 October 1997
ER -