TY - GEN
T1 - Si photonic nano-wire tunble micro-ring resonator composed of triply-liked variable couplers
AU - Ikeda, Taro
AU - Kanamori, Yoshiaki
AU - Hane, Kazuhiro
PY - 2012/5/7
Y1 - 2012/5/7
N2 - A tunable Si photonic nano-wire (320nm-wide, 340nm-thick) waveguide micro-ring resonator composed of triply-linked variable couplers (two are for wavelength tuning and one is for bus-line coupling) is proposed. The roundtrip optical path of the micro-ring is modulated by the displacement of coupler waveguide with an ultra-small comb-drive actuator. In addition, the coupling between the micro-ring and a bus-line waveguide is also controlled by a gap-variable waveguide coupler with another actuator. Therefore, the proposed tunable micro-ring can be operated as an ultra-small wavelength-selective-switch with a wavelength-hitless mechanism for Si on-chip telecommunication system. Principle, design and fabrication are presented. The characteristics of the proposed device are measured in 1.5μm fiber optic telecommunication wavelength region. The wavelength tuning range is 10.0nm for the actuator displacement of 1.0μm at the voltage of 37.3V.
AB - A tunable Si photonic nano-wire (320nm-wide, 340nm-thick) waveguide micro-ring resonator composed of triply-linked variable couplers (two are for wavelength tuning and one is for bus-line coupling) is proposed. The roundtrip optical path of the micro-ring is modulated by the displacement of coupler waveguide with an ultra-small comb-drive actuator. In addition, the coupling between the micro-ring and a bus-line waveguide is also controlled by a gap-variable waveguide coupler with another actuator. Therefore, the proposed tunable micro-ring can be operated as an ultra-small wavelength-selective-switch with a wavelength-hitless mechanism for Si on-chip telecommunication system. Principle, design and fabrication are presented. The characteristics of the proposed device are measured in 1.5μm fiber optic telecommunication wavelength region. The wavelength tuning range is 10.0nm for the actuator displacement of 1.0μm at the voltage of 37.3V.
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U2 - 10.1109/MEMSYS.2012.6170273
DO - 10.1109/MEMSYS.2012.6170273
M3 - Conference contribution
AN - SCOPUS:84860438368
SN - 9781467303248
T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
SP - 660
EP - 663
BT - 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
T2 - 2012 IEEE 25th International Conference on Micro Electro Mechanical Systems, MEMS 2012
Y2 - 29 January 2012 through 2 February 2012
ER -