Simple fabrication of high density concave nanopyramid array (NPA) on Si surface

S. Sawara, M. Koh, T. Goto, Y. Ando, T. Shinada, I. Ohdomari

研究成果: Conference article査読

5 被引用数 (Scopus)


A simple process to fabricate two-dimensional (2-D) concave nanopyramid array (NPA) with nanometer period on Si surface has been developed by using electron beam (EB) irradiation and wet etching. The enhanced etch rate (ER) of EB-exposed SiO2 in HF-based solution has been utilized. Mask oxide layers with the thicknesses of 11-30 nm were shot with 30-keV focused EB at spot doses ranging from 20 to 140 pC/dot. EB-exposed SiO2 layers were selectively etched by dipping in 1% HF or buffered HF (BHF). The Si substrates were then dipped in anisotropic etchant hydrazine (N2H4·H2O) to form concave NPAs, where patterned SiO2 layers were used as etch mask. By using this simple process, 50-nm period concave NPA with the size of 20 nm was fabricated successfully.

ジャーナルApplied Surface Science
出版ステータスPublished - 2000 6月
イベント3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3) - Karuizawa, Jpn
継続期間: 1999 10月 251999 10月 29

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜


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