TY - JOUR
T1 - Simple fabrication of high density concave nanopyramid array (NPA) on Si surface
AU - Sawara, S.
AU - Koh, M.
AU - Goto, T.
AU - Ando, Y.
AU - Shinada, T.
AU - Ohdomari, I.
N1 - Funding Information:
This work is partly supported by a Grant-in-Aid for Scientific Research (B) from the ministry of Education, Sports, Science and Culture, Japan and by a Research for the Future from the Japan Society for the Promotion of Science (JSPS).
PY - 2000/6
Y1 - 2000/6
N2 - A simple process to fabricate two-dimensional (2-D) concave nanopyramid array (NPA) with nanometer period on Si surface has been developed by using electron beam (EB) irradiation and wet etching. The enhanced etch rate (ER) of EB-exposed SiO2 in HF-based solution has been utilized. Mask oxide layers with the thicknesses of 11-30 nm were shot with 30-keV focused EB at spot doses ranging from 20 to 140 pC/dot. EB-exposed SiO2 layers were selectively etched by dipping in 1% HF or buffered HF (BHF). The Si substrates were then dipped in anisotropic etchant hydrazine (N2H4·H2O) to form concave NPAs, where patterned SiO2 layers were used as etch mask. By using this simple process, 50-nm period concave NPA with the size of 20 nm was fabricated successfully.
AB - A simple process to fabricate two-dimensional (2-D) concave nanopyramid array (NPA) with nanometer period on Si surface has been developed by using electron beam (EB) irradiation and wet etching. The enhanced etch rate (ER) of EB-exposed SiO2 in HF-based solution has been utilized. Mask oxide layers with the thicknesses of 11-30 nm were shot with 30-keV focused EB at spot doses ranging from 20 to 140 pC/dot. EB-exposed SiO2 layers were selectively etched by dipping in 1% HF or buffered HF (BHF). The Si substrates were then dipped in anisotropic etchant hydrazine (N2H4·H2O) to form concave NPAs, where patterned SiO2 layers were used as etch mask. By using this simple process, 50-nm period concave NPA with the size of 20 nm was fabricated successfully.
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U2 - 10.1016/S0169-4332(00)00118-5
DO - 10.1016/S0169-4332(00)00118-5
M3 - Conference article
AN - SCOPUS:0034206632
SN - 0169-4332
VL - 159
SP - 481
EP - 485
JO - Applied Surface Science
JF - Applied Surface Science
T2 - 3rd International Symposium on the Control of Semiconductor Interfaces (ISCSI-3)
Y2 - 25 October 1999 through 29 October 1999
ER -