Simple nanostructuring on silicon surface by means of focused beam patterning and wet etching

M. Koh, S. Sawara, T. Shinada, T. Goto, Y. Ando, I. Ohdomari

研究成果: Conference article査読

26 被引用数 (Scopus)


Two simple and easy processes have been demonstrated to fabricate two-dimensional (2-D) nanostructure array on Si surfaces by using only focused beam patterning and wet etching. First, we took advantage of the enhanced etch rate (ER) of electron-beam-exposed SiO2 in HF based solution. A 30-nm thick oxide layer was shot with 30-keV focused-electron beam with spot doses ranging from 20 to 140 pC/dot. After development of SiO2 layer in 1% HF solution, the Si substrate was etched by hydrazine (N2H4H2O) to form pyramidal etch-pits. By using this process, 50-nm concave nanopyramid array (NPA) with 100-nm period can be fabricated successfully. Second, we utilized the newly found retarded ER of ion-beam-exposed Si in hydrazine. 2-D arrays of dots were written directly on the Si substrate with 60-keV Si focused-ion beam (FIB) with a dose of 5×1014 ions/cm2. The Si substrate was then dipped in hydrazine solution, where the unexposed region was selectively etched by hydrazine. By using this process, 100-nm convex NPA with 200-nm period can be fabricated easily. The performance of the proposed processes is compared in terms of pattern size, throughput and process diversity.

ジャーナルApplied Surface Science
出版ステータスPublished - 2000 8月 1
イベント5th International Symposium on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-5) - Provence, France
継続期間: 1999 7月 61999 7月 9

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜


「Simple nanostructuring on silicon surface by means of focused beam patterning and wet etching」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。