Solubilities and equilibrium distribution coefficients of oxygen and carbon in silicon

Takayuki Narushima, Atsushi Yamashita, Chiaki Ouchi, Yasutaka Iguchi

研究成果: Article査読

26 被引用数 (Scopus)

抄録

Solubilities of oxygen and carbon in solid silicon at 1673 K were determined by using a chemical equilibrium technique. Solid silicon was heated at 1673 K in an oxygen atmosphere for 1800 ks, and then oxygen content in the solid silicon equilibrated with silica was measured by the inert gas fusion-IR absorption method. Carbon content in the solid silicon equilibrated with silicon carbide after heating at 1673 K in an Ar-5%CO atmosphere for 4860 ks was measured by the combustion-IR absorption method. Comparing these solubility values in solid silicon with those in liquid silicon that were previously reported by the present authors, the equilibrium distribution coefficients of oxygen and carbon in silicon at the melting point were evaluated to be 0.85 ± 0.08 and 0.30 ± 0.16, respectively.

本文言語English
ページ(範囲)2120-2124
ページ数5
ジャーナルMaterials Transactions
43
8
DOI
出版ステータスPublished - 2002 8月

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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