TY - GEN
T1 - Statistical Analysis of Intrinsic High-Frequency Characteristic Fluctuation of Emerging Silicon Gate-All-Around Nanosheet (NS) MOSFETs at Sub-3-nm Nodes
AU - Kola, Sekhar Reddy
AU - Li, Yiming
AU - Chuang, Min Hui
AU - Endo, Kazuhiko
AU - Samukawa, Seiji
N1 - Funding Information:
This work was supported in part by the National Science and Technology Council, Taiwan, under Grant MOST 111-2221-EA49–181, MOST 111-2634-F-A49-008, and NSCT 111–2218-E-492–009-MBK; in part by the “2022 Qualcomm Taiwan Research Program (NYCU)” under Grant NAT-487835 SOW; and in part by the “Center for mm Wave Smart Radar Systems and Technologies” under the Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education in Taiwan.
Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - In recent years, the GAA NS Si MOSFET has been explored as a leading technology. However, the intrinsic parameters of GAA NS Si MOSFETs are affected to varying degrees by various fluctuation sources, Statistically independent and identically distributed (iid) assumptions on the aforementioned random variables overestimate the variability of high-frequency characteristics, compared with considering all fluctuation factors simultaneously. Notably, the random nanosized metal grains dominates the variations of voltage gain, cut-off frequency, and 3dB frequency because the random work functions strongly alter the channel surface potential.
AB - In recent years, the GAA NS Si MOSFET has been explored as a leading technology. However, the intrinsic parameters of GAA NS Si MOSFETs are affected to varying degrees by various fluctuation sources, Statistically independent and identically distributed (iid) assumptions on the aforementioned random variables overestimate the variability of high-frequency characteristics, compared with considering all fluctuation factors simultaneously. Notably, the random nanosized metal grains dominates the variations of voltage gain, cut-off frequency, and 3dB frequency because the random work functions strongly alter the channel surface potential.
KW - device modeling
KW - gate-all-around
KW - interface trap fluctuation
KW - nanosheet
KW - random dopant fluctuation
KW - work function fluctuation
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U2 - 10.1109/EDTM55494.2023.10103120
DO - 10.1109/EDTM55494.2023.10103120
M3 - Conference contribution
AN - SCOPUS:85158135389
T3 - 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
BT - 7th IEEE Electron Devices Technology and Manufacturing Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Y2 - 7 March 2023 through 10 March 2023
ER -