抄録
We have investigated novel layer-by-layer MBE growth of highly strained InAs epilayers on the GaAs(001) substrate up to 13 ML, by in-situ scanning tunneling microscopy (STM). This growth can be only achieved when the growing front exhibits a 4×2 or a new 6×2 diffraction symmetry. Here we will discuss the atomic structure of these two reconstructions which facilitate novel planar growth, and also document the relationship between the growth mode and surface reconstruction.
| 本文言語 | English |
|---|---|
| ページ（範囲） | S13-S15 |
| ジャーナル | Journal of the Korean Physical Society |
| 巻 | 31 |
| 号 | SUPPL. PART 1 |
| 出版ステータス | Published - 1997 12月 1 |
ASJC Scopus subject areas
- 物理学および天文学（全般）