We have investigated novel layer-by-layer MBE growth of highly strained InAs epilayers on the GaAs(001) substrate up to 13 ML, by in-situ scanning tunneling microscopy (STM). This growth can be only achieved when the growing front exhibits a 4×2 or a new 6×2 diffraction symmetry. Here we will discuss the atomic structure of these two reconstructions which facilitate novel planar growth, and also document the relationship between the growth mode and surface reconstruction.
|ジャーナル||Journal of the Korean Physical Society|
|号||SUPPL. PART 1|
|出版ステータス||Published - 1997 12月 1|
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