TY - JOUR
T1 - Strain-induced superconductor/insulator transition and field effect in a thin single crystal of molecular conductor
AU - Kawasugi, Yoshitaka
AU - Yamamoto, Hiroshi M.
AU - Hosoda, Mutsumi
AU - Tajima, Naoya
AU - Fukunaga, Takeo
AU - Tsukagoshi, Kazuhito
AU - Kato, Reizo
N1 - Funding Information:
We would like to acknowledge Professors K. Kajita and Y. Nishio, and Dr. Y. Shimizu, Dr. T. Minari, and Dr. M. Kurmoo for valuable discussions. This work was partially supported by Grants-in-Aid for Scientific Research (Nos. 16GS0219, 18028027) from the Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2008
Y1 - 2008
N2 - The strain in an organic field-effect channel was controlled using a pressure-sensitive organic superconductor κ- (BEDT-TTF)2 Cu [N (CN)2] Br [BEDT-TTF=bis (ethylenedithio)tetrathia- fulvalene]. The difference in thermal properties between the channel and the substrate induced strain with cooling, resulting in a phase transition. An unshrinkable Si O2 Si substrate was used to strain the subject material to the insulating state at low temperature, whereas a shrinkable polymer-based substrate allowed it to be a superconductor. The strain-induced insulating phase on Si O2 Si is at the vicinity of the phase boundary with the superconducting phase, actualizing field-effect transistor behavior.
AB - The strain in an organic field-effect channel was controlled using a pressure-sensitive organic superconductor κ- (BEDT-TTF)2 Cu [N (CN)2] Br [BEDT-TTF=bis (ethylenedithio)tetrathia- fulvalene]. The difference in thermal properties between the channel and the substrate induced strain with cooling, resulting in a phase transition. An unshrinkable Si O2 Si substrate was used to strain the subject material to the insulating state at low temperature, whereas a shrinkable polymer-based substrate allowed it to be a superconductor. The strain-induced insulating phase on Si O2 Si is at the vicinity of the phase boundary with the superconducting phase, actualizing field-effect transistor behavior.
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U2 - 10.1063/1.2949316
DO - 10.1063/1.2949316
M3 - Article
AN - SCOPUS:45749146580
SN - 0003-6951
VL - 92
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 24
M1 - 243508
ER -