Structural defect-related photoluminescence in GaN

L. Chen, B. J. Skromme, M. K. Mikhov, H. Yamane, M. Aoki, F. J. DiSalvo, B. Wagner, R. F. Davis, P. A. Grudowski, R. D. Dupuis

研究成果: ジャーナルへの寄稿会議記事査読

抄録

Broad, low temperature photoluminescence (PL) peaks near 3.4-3.42 eV in GaN have previously been associated with basal-plane stacking faults. Recently, we observed unusually sharp and highly structured PL peaks in this region in high quality bulk GaN grown from a Na/Ga flux, some of which display characteristic shifts and narrowing as a function of excitation power. Here, we study these peaks as a function of excitation intensity and crystal polarity, and compare them to those observed in GaN grown on off-axis SiC or sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD). In the off-axis material on either substrate, similar peaks are observed to those in the bulk samples. In addition, a low energy peak near 3.21 eV is observed, which does not occur in the bulk material.

本文言語英語
ページ(範囲)637-642
ページ数6
ジャーナルMaterials Research Society Symposium - Proceedings
798
DOI
出版ステータス出版済み - 2003
イベントGaN and Related Alloys - 2003 - Boston, MA, 米国
継続期間: 2003 12月 12003 12月 5

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