Structural, optical and electrical properties of DC sputtered indium saving indium-tin oxide (ITO) thin films

Leandro Voisin, Makoto Ohtsuka, Svitlana Petrovska, Ruslan Sergiienko, Takashi Nakamura

研究成果: ジャーナルへの寄稿学術論文査読

22 被引用数 (Scopus)

抄録

Amorphous indium tin oxide (ITO) thin films with reduced to 50 mass% indium oxide content were prepared by direct current (DC) sputtering of ITO target in mixed argon-oxygen atmosphere onto glass substrates preheated at 523 K. The films were subsequently heat-treated in air at different temperatures in the range of 523–923 K for 60 min. The use of oxygen during deposition resulted in highly transparent (>80%) in visible and infrared ranges of spectra films. It has been found from the electrical measurements that as-deposited films under optimum sputtering conditions at working gas flow rate of Q(Ar)/Q(O2) = 50 sccm/0.5 sccm showed minimum volume resistivity of about 694 μΩcm. As-deposited thin films obtained under the optimum condition showed amorphous structure. Improving of crystallisation has been observed with increasing heat treatment temperature. It has been found that DC sputtered films with decreasing amount of indium oxide have smooth surface in contrast to typical ITO (90 mass% indium oxide).

本文言語英語
ページ(範囲)728-737
ページ数10
ジャーナルOptik
156
DOI
出版ステータス出版済み - 2018 3月

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