TY - GEN
T1 - Structure and thermoelectric properties of PbTe films deposited by thermal evaporation method
AU - Nguyen, M. P.
AU - Froemel, J.
AU - Hatayama, S.
AU - Sutou, Y.
AU - Koike, J.
AU - Tanaka, S.
AU - Esashi, Masayoshi
AU - Gessner, T.
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/11/21
Y1 - 2016/11/21
N2 - Lead telluride (PbTe) thin films have been deposited on SiO2substrate using thermal evaporation method. The structure of the films was found to have a face-centered cubic (fcc) with predominant grain growth in the (200) direction for both as-deposited and annealed samples up to 350 oC in vacuum for 1 h. The in-plain electrical resistivity and Hall measurements via van der Pauw method as a function of annealed temperatures were measured. It was found that increasing the annealing temperature led to increase in grain size, which in turn caused decrease of electrical resistivity and increase of Seebeck coefficient. The high power factor of 141.0 ìWm-1K-2was obtained for the annealed samples at 350 oC in vacuum for 1 h.
AB - Lead telluride (PbTe) thin films have been deposited on SiO2substrate using thermal evaporation method. The structure of the films was found to have a face-centered cubic (fcc) with predominant grain growth in the (200) direction for both as-deposited and annealed samples up to 350 oC in vacuum for 1 h. The in-plain electrical resistivity and Hall measurements via van der Pauw method as a function of annealed temperatures were measured. It was found that increasing the annealing temperature led to increase in grain size, which in turn caused decrease of electrical resistivity and increase of Seebeck coefficient. The high power factor of 141.0 ìWm-1K-2was obtained for the annealed samples at 350 oC in vacuum for 1 h.
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U2 - 10.1109/NANO.2016.7751384
DO - 10.1109/NANO.2016.7751384
M3 - Conference contribution
AN - SCOPUS:85006943879
T3 - 16th International Conference on Nanotechnology - IEEE NANO 2016
SP - 566
EP - 568
BT - 16th International Conference on Nanotechnology - IEEE NANO 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
Y2 - 22 August 2016 through 25 August 2016
ER -