Thin CdxZn1-xS films have been deposited on Si(100), GaAs (100) and fused silica substrates at low pressure in the temperature range of 473-673 K by remote plasma enhanced chemical vapor deposition (RPECVD) using Cd/Zn(S2CN(C2H5)2) 2·C10H8N2 as single-source precursor. The influence of deposition conditions on physical and chemical properties of the films has been studied by ellipsometry, IR- and Raman spectroscopies, SEM, HREM, SAED, EDS and X-ray diffraction using synchrotron radiation. The zinc and cadmium concentration gradient along the film thickness was observed. The CdxZn1-xS film is substitution solid solution with hexagonal texture structure.
|ジャーナル||Journal De Physique. IV : JP|
|出版ステータス||出版済み - 2001|
|イベント||13th European Conference on Chemical Vapor Deposition (EUROCVD 13) - Athens, ギリシャ|
継続期間: 2001 8月 26 → 2001 8月 31