Structure study of thin RPECVD CdxZn1-xS films

N. I. Fainer, M. L. Kosinova, Yu M. Rumyantsev, E. A. Maximovski, M. Terauchi, K. Shibata, F. Satoh, M. Tanaka, N. P. Sysoeva, F. A. Kuznetsov

研究成果: ジャーナルへの寄稿会議記事査読


Thin CdxZn1-xS films have been deposited on Si(100), GaAs (100) and fused silica substrates at low pressure in the temperature range of 473-673 K by remote plasma enhanced chemical vapor deposition (RPECVD) using Cd/Zn(S2CN(C2H5)2) 2·C10H8N2 as single-source precursor. The influence of deposition conditions on physical and chemical properties of the films has been studied by ellipsometry, IR- and Raman spectroscopies, SEM, HREM, SAED, EDS and X-ray diffraction using synchrotron radiation. The zinc and cadmium concentration gradient along the film thickness was observed. The CdxZn1-xS film is substitution solid solution with hexagonal texture structure.

ジャーナルJournal De Physique. IV : JP
出版ステータス出版済み - 2001
イベント13th European Conference on Chemical Vapor Deposition (EUROCVD 13) - Athens, ギリシャ
継続期間: 2001 8月 262001 8月 31


「Structure study of thin RPECVD CdxZn1-xS films」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。