抄録
We propose and demonstrate a novel technique using focused Si ion beam implantation to produce high-quality mesoscopic channels. Low-energy Si implantation compensates the surface potential of a modulation-doped heterostructure that is designed to have no conductive channels at the heterointerface. The implantation forms a conductive channel separated from the damaged implanted region. The mobility of the channel is improved by decreasing the ion energy from 100 to 35 keV. Sub-μm to 5 μm wide channels fabricated by 35 keV Si+ ions show a mobility of 5.3×105 cm2/V s and a ballistic length of 3.1 μm at 1.5 K.
| 本文言語 | 英語 |
|---|---|
| ページ（範囲） | 51-53 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 63 |
| 号 | 1 |
| DOI | |
| 出版ステータス | 出版済み - 1993 |