抄録
Single-crystal gallium nitride was grown on each of the two polar {0001} planes of 6H-silicon carbide substrates utilizing metal-organic vapor-phase epitaxy. The substrate polarity is clearly shown to strongly influence the surface morphology and the photoluminescence property of the layer. The examination of the layer surfaces using x-ray photoelectron spectroscopy revealed that {0001} GaN grown on the basal planes of SiC changes its polarity in accordance with the substrate polarity.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 4531-4535 |
| ページ数 | 5 |
| ジャーナル | Journal of Applied Physics |
| 巻 | 64 |
| 号 | 9 |
| DOI | |
| 出版ステータス | Published - 1988 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（全般）