Subwavelength antireflection gratings for light emitting diodes and photodiodes fabricated by fast atom beam etching

Masahiro Ishimori, Yoshiaki Kanamori, Minoru Sasaki, Kazuhiro Hane

研究成果: Article査読

31 被引用数 (Scopus)

抄録

A two-dimensional antireflection subwavelength-structured (SWS) surface is fabricated on GaAlAs light-emitting diodes (LEDs) and photodiodes. The SWS is patterned by electron beam lithography and etched by fast atom beams of SF6 and Cl2 gases. The SWS grating has a conical profile, 200 nm period and 270 nm groove depth. The emission intensity from this LED is 30% larger than that from the LED without a SWS grating at the peak emission wavelength. When this device is used as a photodiode, the reflection reduced by the SWS surface increases both the short-circuit current and open-circuit voltage. The SWS surface is useful as an antireflection structure improving the efficiency of the light emission of LEDs and the light detection of photodiodes.

本文言語English
ページ(範囲)4346-4349
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
41
6 B
DOI
出版ステータスPublished - 2002 6月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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