抄録
Electromigration (EM) is a serious problem for an Al line subjected to high-density electron flow. The present work reports a strategy for achieving a suitable passivation thickness on the line against EM damage. Experiments carried out in this work indicated that the threshold current density, a measure of EM resistance, increased with increasing passivation thickness and became saturated for thicknesses greater than 1700 nm. The saturation was shown to begin at the situation in which the level of the passivation top surface beside the Al line and that of the Al top surface are the same. A suitable passivation thickness for effectively increasing EM resistance was determined based on this finding.
本文言語 | English |
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ページ(範囲) | 219-222 |
ページ数 | 4 |
ジャーナル | Materials Letters |
巻 | 184 |
DOI | |
出版ステータス | Published - 2016 12月 1 |
ASJC Scopus subject areas
- 材料科学(全般)
- 凝縮系物理学
- 材料力学
- 機械工学