Surface activated wafer bonding of LiNbO3 and SiO2/Si for LNOI on Si

Ryo Takigawa; Eiji Higurashi; Tanemasa Asano

doi:10.23919/LTB-3D.2017.7947443

Surface activated wafer bonding of LiNbO₃ and SiO₂/Si for LNOI on Si

Ryo Takigawa, Eiji Higurashi, Tanemasa Asano

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Wafer-level bonding of LiNbO₃ (LN) and Si with thermally grown SiO₂ layer is demonstrated using surface-activated bonding method for the realization of LiNbO₃-on-Insulator (LNOI) on Si.

本文言語	English
ホスト出版物のタイトル	Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	47
ページ数	1
ISBN（電子版）	9784904743034
DOI	https://doi.org/10.23919/LTB-3D.2017.7947443
出版ステータス	Published - 2017 6月 13
外部発表	はい
イベント	5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 - Tokyo, Japan 継続期間: 2017 5月 16 → 2017 5月 18

出版物シリーズ

名前	Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017

Other

Other	5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017
国/地域	Japan
City	Tokyo
Period	17/5/16 → 17/5/18

ASJC Scopus subject areas

電子工学および電気工学
産業および生産工学
電子材料、光学材料、および磁性材料
表面、皮膜および薄膜

文献へのアクセス

10.23919/LTB-3D.2017.7947443

他のファイルとリンク

引用スタイル

Takigawa, R., Higurashi, E., & Asano, T. (2017). Surface activated wafer bonding of LiNbO₃ and SiO₂/Si for LNOI on Si. In Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017 (pp. 47). [7947443] (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/LTB-3D.2017.7947443

Surface activated wafer bonding of LiNbO₃ and SiO₂/Si for LNOI on Si. / Takigawa, Ryo; Higurashi, Eiji; Asano, Tanemasa.
Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 47 7947443 (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017).

研究成果: Conference contribution

Takigawa, R, Higurashi, E & Asano, T 2017, Surface activated wafer bonding of LiNbO₃ and SiO₂/Si for LNOI on Si. in Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017., 7947443, Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017, Institute of Electrical and Electronics Engineers Inc., pp. 47, 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017, Tokyo, Japan, 17/5/16. https://doi.org/10.23919/LTB-3D.2017.7947443

Takigawa R, Higurashi E, Asano T. Surface activated wafer bonding of LiNbO₃ and SiO₂/Si for LNOI on Si. In Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 47. 7947443. (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017). doi: 10.23919/LTB-3D.2017.7947443

Takigawa, Ryo ; Higurashi, Eiji ; Asano, Tanemasa. / Surface activated wafer bonding of LiNbO₃ and SiO₂/Si for LNOI on Si. Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 47 (Proceedings of 2017 5th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2017).

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abstract = "Wafer-level bonding of LiNbO3 (LN) and Si with thermally grown SiO2 layer is demonstrated using surface-activated bonding method for the realization of LiNbO3-on-Insulator (LNOI) on Si.",

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