抄録
Surface electrical breakdown on a semi-insulating InP substrate is investigated. The surface is bare or passivated with anodic oxide, SiO2 or Si3N4. The observed breakdown voltage is about one order of magnitude higher than that of semi-insulating GaAs. The leakage current is sensitive to passivation processes and a thin anodic oxide gives the lowest leakage.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 299-301 |
| ページ数 | 3 |
| ジャーナル | Electronics Letters |
| 巻 | 21 |
| 号 | 7 |
| DOI | |
| 出版ステータス | Published - 1985 1月 1 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学