抄録
Synchrotron-radiation deep level transient spectroscopy (SR-DLTS) technique was developed to investigate the electrical properties and the origin of defects in the metal/insulator Si heterostructures. Two hole traps, HT1 and HT2, with activation energies of 0.074 and 0.84 eV, respectively were detected in the AlN/AlN/Si heterostructures. The epitaxial growth by pulsed laser deposition (PLD) technique of AlN films was observed using reflection high energy electron diffraction (RHEED) and cross-sectional transmission electron microscopy (XTEM) methods. The results show that HT1 consists of continuous levels above the valence band whereas HT2 is a discrete level in the AlN films.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 413-415 |
| ページ数 | 3 |
| ジャーナル | Applied Physics Letters |
| 巻 | 85 |
| 号 | 3 |
| DOI | |
| 出版ステータス | Published - 2004 7月 19 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（その他）