TY - GEN
T1 - Technologies for Power Device Packaging by using Solid Liquid Interdiffusion Bonding - SLID
AU - Baum, Mario
AU - Frömel, Jörg
AU - Hofmann, Christian
AU - Wiemer, Maik
AU - Hiller, Karla
AU - Kuhn, Harald
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021
Y1 - 2021
N2 - This paper presents several approaches for bonding at low temperature with a resulting interface alloy that is stable at temperatures higher than the bonding temperature itself. The bonding principle described herewith is called Solid Liquid Interdiffusion (SLID) bonding, where two metals were used for creating an alloy. First, a low melting point metal defines the process temperature e. g. Sn, In, or Ga. With a high solubility, a second metal forms together with the first metal intermetallic phase(s) during isothermal solidification. By the concentration and the stoichiometric relation of the components the liquid phase while bonding is mainly controlled. This paper will show different material combinations and different deposition technologies for the metals used with regard to efficient fabrication processes.
AB - This paper presents several approaches for bonding at low temperature with a resulting interface alloy that is stable at temperatures higher than the bonding temperature itself. The bonding principle described herewith is called Solid Liquid Interdiffusion (SLID) bonding, where two metals were used for creating an alloy. First, a low melting point metal defines the process temperature e. g. Sn, In, or Ga. With a high solubility, a second metal forms together with the first metal intermetallic phase(s) during isothermal solidification. By the concentration and the stoichiometric relation of the components the liquid phase while bonding is mainly controlled. This paper will show different material combinations and different deposition technologies for the metals used with regard to efficient fabrication processes.
KW - Deposition
KW - Inductive heating
KW - Joining
KW - Low temperature
KW - SLID
KW - Solid liquid interdiffusion
KW - Wafer bonding
UR - http://www.scopus.com/inward/record.url?scp=85124199743&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85124199743&partnerID=8YFLogxK
U2 - 10.1109/ICSJ52620.2021.9648906
DO - 10.1109/ICSJ52620.2021.9648906
M3 - Conference contribution
AN - SCOPUS:85124199743
T3 - 2021 IEEE CPMT Symposium Japan, ICSJ 2021
SP - 31
EP - 32
BT - 2021 IEEE CPMT Symposium Japan, ICSJ 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 10th IEEE CPMT Symposium Japan, ICSJ 2021
Y2 - 10 November 2021 through 12 November 2021
ER -