Temperature and applied voltage dependence of magnetoresistance ratio in Fe/Al oxide/Fe junctions

Nobuki Tezuka, Terunobu Miyazaki

研究成果: ジャーナルへの寄稿学術論文査読

16 被引用数 (Scopus)

抄録

The tunnel magnetoresistance(TMR) ratio have been investigated in the Fe/Al oxide/Fe junctions, specifically the temperature and applied voltage dependence of the TMR ratio. It was found that the dependence of resistance at saturation magnetization state(Rs) on the applied voltage at 4.2 K is completely anomalous in terms of the expected tunneling behavior. This "zero-bias anomaly" is due to the magnetic impurity in or near the boundary between ferromagnetic electrodes and insulator. The TMR ratio decreased rapidly with increasing temperature. The TMR ratio also decreased when increasing the applied voltage. We discussed the dependence of the TMR ratio on temperature and applied voltage taking into account the impurity assisted tunneling.

本文言語英語
ページ(範囲)L218-L220
ジャーナルJapanese Journal of Applied Physics
37
2 SUPPL. B
DOI
出版ステータス出版済み - 1998 2月 15

フィンガープリント

「Temperature and applied voltage dependence of magnetoresistance ratio in Fe/Al oxide/Fe junctions」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル