抄録
A viscosity measurement system for molten semiconductors has been established by adopting an oscillating cup method. The temperature dependence of viscosity for molten GaAs in the temperature range from near the melting point up to 1480°C was obtained. The viscosity and activation energy of molten GaAs showed a remarkable increase in the vicinity of the melting point (1238°C). The viscosity of molten GaAs decreases with an increase in temperature above 1320°C, with an activation energy of about 0.28 eV.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1249-1250 |
| ページ数 | 2 |
| ジャーナル | Applied Physics Letters |
| 巻 | 50 |
| 号 | 18 |
| DOI | |
| 出版ステータス | Published - 1987 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 物理学および天文学（その他）