A viscosity measurement system for molten semiconductors has been established by adopting an oscillating cup method. The temperature dependence of viscosity for molten GaAs in the temperature range from near the melting point up to 1480°C was obtained. The viscosity and activation energy of molten GaAs showed a remarkable increase in the vicinity of the melting point (1238°C). The viscosity of molten GaAs decreases with an increase in temperature above 1320°C, with an activation energy of about 0.28 eV.
|ジャーナル||Applied Physics Letters|
|出版ステータス||Published - 1987|
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