TY - GEN
T1 - Terahertz LED based on current injection dual-gate graphene-channel field effect transistors
AU - Yadav, Deepika
AU - Tobah, Youssef
AU - Sugawara, Kenta
AU - Mitsushio, Junki
AU - Tamamushi, Gen
AU - Watanabe, Takayuki
AU - Dubinov, Alexander A.
AU - Ryzhii, Maxim
AU - Ryzhii, Victor
AU - Otsuji, Taiichi
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/8/1
Y1 - 2017/8/1
N2 - Previous studies have shown that optical and/or injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) spectral range, which may lead to new types of THz lasers and light-emitting devices [1-4]. Recently we obtained preliminary results of single-mode THz lasing in a forward-biased graphene structure with a lateral p-i-n junction in a distributed-feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) [5]. In this work, we experimentally observe amplified spontaneous broadband THz emission from 1 to 7.6 THz at 100K by carrier-injection in a population-inverted DFB-DG-GFET, demonstrating the birth of a new type of THz light-emitting diodes.
AB - Previous studies have shown that optical and/or injection pumping of graphene can enable negative-dynamic conductivity in the terahertz (THz) spectral range, which may lead to new types of THz lasers and light-emitting devices [1-4]. Recently we obtained preliminary results of single-mode THz lasing in a forward-biased graphene structure with a lateral p-i-n junction in a distributed-feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET) [5]. In this work, we experimentally observe amplified spontaneous broadband THz emission from 1 to 7.6 THz at 100K by carrier-injection in a population-inverted DFB-DG-GFET, demonstrating the birth of a new type of THz light-emitting diodes.
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U2 - 10.1109/DRC.2017.7999519
DO - 10.1109/DRC.2017.7999519
M3 - Conference contribution
AN - SCOPUS:85028084712
T3 - Device Research Conference - Conference Digest, DRC
BT - 75th Annual Device Research Conference, DRC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 75th Annual Device Research Conference, DRC 2017
Y2 - 25 June 2017 through 28 June 2017
ER -