TY - GEN
T1 - Terahertz light emitting transistor based on current injection dualgate graphene-channel FET
AU - Yadav, Deepika
AU - Tobah, Youssef
AU - Sugawara, Kenta
AU - Mitsushio, Junki
AU - Tamamushi, Gen
AU - Watanabe, Takayuki
AU - Dubinov, Alexander A.
AU - Ryzhii, Maxim
AU - Ryzhii, Victor
AU - Otsuji, Taiichi
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/10/12
Y1 - 2017/10/12
N2 - We report on amplified spontaneous broadband terahertz emission in 1-7.6 THz range at 100 K via current injection in a distributed-feedback dual-gate graphene-channel field effect transistor (DFB-DG GFET). The device exhibited a nonlinear threshold-like behavior with respect to the current-injection level. A precise DFB cavity design is expected to transcend the observed spontaneous broadband emission to single-mode THz lasing.
AB - We report on amplified spontaneous broadband terahertz emission in 1-7.6 THz range at 100 K via current injection in a distributed-feedback dual-gate graphene-channel field effect transistor (DFB-DG GFET). The device exhibited a nonlinear threshold-like behavior with respect to the current-injection level. A precise DFB cavity design is expected to transcend the observed spontaneous broadband emission to single-mode THz lasing.
UR - http://www.scopus.com/inward/record.url?scp=85033697462&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85033697462&partnerID=8YFLogxK
U2 - 10.1109/IRMMW-THz.2017.8067215
DO - 10.1109/IRMMW-THz.2017.8067215
M3 - Conference contribution
AN - SCOPUS:85033697462
T3 - International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
BT - 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017
PB - IEEE Computer Society
T2 - 42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017
Y2 - 27 August 2017 through 1 September 2017
ER -