The design concept for high-temperature photo-electronic devices using SrTiO3

F. Horikiri, K. Sato, K. Yashiro, T. Kawada, J. Mizusaki

研究成果: 書籍の章/レポート/Proceedings会議への寄与査読

抄録

Quantum electronic discussion was made on metal/SrTiO3 hetero-structure to obtain the design concept for high-temperature photo-electronic devices using SrTiO3. The current density ratios were calculated between tunneling and thermionic emission component across the hetero-interface, which indicates how much dopant concentration is required for ohmic or Schottky contact. WKB approximation and Gamow transmission coefficient were used in calculation of the tunneling coefficient. The calculated results show good agreement with experimental results. The possibility of high-temperature photo-electronic devices using SrTiO3 was shown both in theoretical and experimental approach.

本文言語英語
ホスト出版物のタイトルECS Transactions - Solid State Ionic Devices 6 - Nanoionics - 214th ECS Meeting
出版社Electrochemical Society Inc.
ページ459-469
ページ数11
51
ISBN(印刷版)9781615676446
DOI
出版ステータス出版済み - 2009
イベントSolid State Ionic Devices 6 - Nanoionics - 214th ECS Meeting - Honolulu, HI, 米国
継続期間: 2008 10月 122008 10月 17

出版物シリーズ

名前ECS Transactions
番号51
16
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

会議

会議Solid State Ionic Devices 6 - Nanoionics - 214th ECS Meeting
国/地域米国
CityHonolulu, HI
Period08/10/1208/10/17

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