TY - JOUR
T1 - Thermo-mechanical stability of wide-bandgap semiconductors
T2 - High temperature hardness of SiC, AlN, GaN, ZnO and ZnSe
AU - Yonenaga, I.
PY - 2001/12/1
Y1 - 2001/12/1
N2 - The hardness of single crystals α-SiC, AlN, GaN, ZnO and ZnSe at elevated temperatures was measured by the Vickers indentation method in the temperature range 20-1400°C. The hardness of SiC, AlN, GaN, ZnO and ZnSe is about 25, 18, 11, 5 and 1 GPa, respectively, at room temperature. SiC, AlN and GaN show a decrease in hardness, originating in the beginning of macroscopic dislocation motion and plastic deformation, only at temperature 1200°C. A high thermo-mechanical stability for SiC, GaN and AlN is deduced.
AB - The hardness of single crystals α-SiC, AlN, GaN, ZnO and ZnSe at elevated temperatures was measured by the Vickers indentation method in the temperature range 20-1400°C. The hardness of SiC, AlN, GaN, ZnO and ZnSe is about 25, 18, 11, 5 and 1 GPa, respectively, at room temperature. SiC, AlN and GaN show a decrease in hardness, originating in the beginning of macroscopic dislocation motion and plastic deformation, only at temperature 1200°C. A high thermo-mechanical stability for SiC, GaN and AlN is deduced.
KW - Hardness
KW - Thermo-mechanical stability
KW - Wide bandgap semiconductors
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U2 - 10.1016/S0921-4526(01)00922-X
DO - 10.1016/S0921-4526(01)00922-X
M3 - Article
AN - SCOPUS:0035669181
SN - 0921-4526
VL - 308-310
SP - 1150
EP - 1152
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
ER -