Thin-film stabilization of LiNbO 3 -type ZnSnO 3 and MgSnO 3 by molecular-beam epitaxy

Kohei Fujiwara, Hiroya Minato, Junichi Shiogai, Akihito Kumamoto, Naoya Shibata, Atsushi Tsukazaki

研究成果: Article査読

15 被引用数 (Scopus)


In polar crystals, cooperative ionic displacement produces a macroscopic spontaneous polarization. Among such polar materials, LiNbO 3 -type wide bandgap oxides are particularly appealing because they offer useful ferroelectric properties and also potentially lead to multiferroic materials. Using molecular-beam epitaxy, we investigated the thin-film growth of high-pressure phase LiNbO 3 -type ZnSnO 3 and discovered a polar oxide candidate, MgSnO 3 . We found that LiNbO 3 -type substrates play an essential role in the crystallization of these compounds, though corundum-type Al 2 O 3 substrates also have the identical crystallographic arrangement of oxygen sublattice. Optical transmittance and electrical transport measurements revealed their potential as a transparent conducting oxide. Establishment of a thin-film synthetic route would be the basis for exploration of functional polar oxides and research on conduction at ferroelectric interfaces and domain walls.

ジャーナルAPL Materials
出版ステータスPublished - 2019 2月 1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 工学(全般)


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