Three-dimensional dopant characterization of actual metal-oxide- semiconductor devices of 65nm node by atom probe tomography

Three-dimensional dopant distributions in actual n- and p-channel metal-oxide-semiconductor devices of 65 nm node in two kinds of commercially available products were investigated by atom probe tomography (APT). Detailed and quantitative dopant distributions in gate, gate oxide, and channel regions were successfully obtained by APT. In particular, similarities as well as differences in the dopant distributions of these two devices, which were made by different fabrication processes, were clarified in detail by estimating the dopant concentrations in the grain, at the grain boundary, and at the interface of the polycrystalline Si gate individually.