Transfer characteristic of im% relative phase for a gaas fet amplifier

研究成果: ジャーナルへの寄稿学術論文査読

38 被引用数 (Scopus)

抄録

The transfer characteristic of relative phase of the third-order intermodulation distortion (IM3) of a GaAs FET amplifier is measured and analyzed. The measurement system and method are also described. For drives in the weakly nonlinear region, the measured relative phase of IMa is equal to that of the carrier and is in agreement with the analysis results using Volterra-series representation. For drives in the saturation region, the measured relative phase of IM3 versus the input power moves drastically compared with that of the carrier and is in agreement with numerical analysis using discrete Fourier transform. Comparison between measured and analytical results shows the drastic move of IMs relative phase is caused by the generation of IMa due to AM-PM conversion. The measured results and the measurement method are useful for the design and adjustment of predistortion-type linearizers for GaAs FET high-power amplifiers.

本文言語英語
ページ(範囲)2509-2514
ページ数6
ジャーナルIEEE Transactions on Microwave Theory and Techniques
45
12 PART 2
DOI
出版ステータス出版済み - 1997

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