TY - JOUR
T1 - Transmission electron microscopy study of Sn-Doped sintered indium oxide
AU - Ishikawa, Yoshimitsu
AU - Nagayama, Hitoshi
AU - Hoshino, Hirokuni
AU - Ohgai, Michiharu
AU - Shibata, Naoya
AU - Yamamoto, Takahisa
AU - Ikuhara, Yuichi
PY - 2009/5
Y1 - 2009/5
N2 - Microstructures of Sn-doped sintered indium oxide were investigated by transmission electron microscopy. It was found that Sn-rich nanosized precipitates were formed inside the ITO grains, in addition to the secondary phases of In4Sn3O12 formed at grain boundaries. By nanobeam electron diffraction analysis, the crystal structure of the nanosized precipitates was determined to be the fluorite structure, which is different from the bixbyite structure of the ITO matrix. The structural change in the Sn-rich nanosized precipitates can be explained by the insertion of O2- ions in the vacancy sites of the bixbyite structure during the substitution of In3+ sites by Sn4+.
AB - Microstructures of Sn-doped sintered indium oxide were investigated by transmission electron microscopy. It was found that Sn-rich nanosized precipitates were formed inside the ITO grains, in addition to the secondary phases of In4Sn3O12 formed at grain boundaries. By nanobeam electron diffraction analysis, the crystal structure of the nanosized precipitates was determined to be the fluorite structure, which is different from the bixbyite structure of the ITO matrix. The structural change in the Sn-rich nanosized precipitates can be explained by the insertion of O2- ions in the vacancy sites of the bixbyite structure during the substitution of In3+ sites by Sn4+.
KW - Bixbyite structure
KW - Fluorite structure
KW - Precipitate
KW - Tin-doped indium oxide
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U2 - 10.2320/matertrans.MC200814
DO - 10.2320/matertrans.MC200814
M3 - Article
AN - SCOPUS:67650496620
SN - 1345-9678
VL - 50
SP - 959
EP - 963
JO - Materials Transactions
JF - Materials Transactions
IS - 5
ER -