Transmission electron microscopy study of Sn-Doped sintered indium oxide

Yoshimitsu Ishikawa, Hitoshi Nagayama, Hirokuni Hoshino, Michiharu Ohgai, Naoya Shibata, Takahisa Yamamoto, Yuichi Ikuhara

    研究成果: Article査読

    4 被引用数 (Scopus)

    抄録

    Microstructures of Sn-doped sintered indium oxide were investigated by transmission electron microscopy. It was found that Sn-rich nanosized precipitates were formed inside the ITO grains, in addition to the secondary phases of In4Sn3O12 formed at grain boundaries. By nanobeam electron diffraction analysis, the crystal structure of the nanosized precipitates was determined to be the fluorite structure, which is different from the bixbyite structure of the ITO matrix. The structural change in the Sn-rich nanosized precipitates can be explained by the insertion of O2- ions in the vacancy sites of the bixbyite structure during the substitution of In3+ sites by Sn4+.

    本文言語English
    ページ(範囲)959-963
    ページ数5
    ジャーナルMaterials Transactions
    50
    5
    DOI
    出版ステータスPublished - 2009 5月

    ASJC Scopus subject areas

    • 材料科学(全般)
    • 凝縮系物理学
    • 材料力学
    • 機械工学

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