抄録
An accurate device simulator for polycrystalline-silicon thin-film transistors is developed. In this simulator, the influences of grain-boundaries (GBs) are incorporated into the mobility model, and the basic semiconductor equations are solved combining with the carrier generation/recombination model. As a result, it becomes possible to quantitatively analyze the influence of the GBs on the kink effect and the avalanche breakdown phenomenon, and the influences of the GB trap density and the grain size on the device characteristics.
| 本文言語 | English |
|---|---|
| ページ | 1003-1006 |
| ページ数 | 4 |
| 出版ステータス | Published - 1990 12月 1 |
| イベント | 22nd International Conference on Solid State Devices and Materials - Sendai, Jpn 継続期間: 1990 8月 22 → 1990 8月 24 |
Other
| Other | 22nd International Conference on Solid State Devices and Materials |
|---|---|
| City | Sendai, Jpn |
| Period | 90/8/22 → 90/8/24 |
ASJC Scopus subject areas
- 工学（全般）