Underlayer-dependent perpendicular magnetic anisotropy of Co2Fe0.4Mn0.6Si Heusler alloy ultra-thin films

M. Sun; S. Takahashi; T. Kubota; A. Tsukamoto; Y. Sonobe; K. Takanashi

doi:10.1109/INTMAG.2017.8007727

Underlayer-dependent perpendicular magnetic anisotropy of Co₂Fe_0.4Mn_0.6Si Heusler alloy ultra-thin films

M. Sun, S. Takahashi, T. Kubota, A. Tsukamoto, Y. Sonobe, K. Takanashi

金属材料研究所・物質創製研究部

研究成果: Conference contribution

抄録

Spin transfer torque magnetoresistive random access memory (STT-MRAM) is being developed as a candidate for the next generation memories nowadays.

本文言語	English
ホスト出版物のタイトル	2017 IEEE International Magnetics Conference, INTERMAG 2017
出版社	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子版）	9781538610862
DOI	https://doi.org/10.1109/INTMAG.2017.8007727
出版ステータス	Published - 2017 8月 10
イベント	2017 IEEE International Magnetics Conference, INTERMAG 2017 - Dublin, Ireland 継続期間: 2017 4月 24 → 2017 4月 28

出版物シリーズ

名前	2017 IEEE International Magnetics Conference, INTERMAG 2017

Other

Other	2017 IEEE International Magnetics Conference, INTERMAG 2017
国/地域	Ireland
City	Dublin
Period	17/4/24 → 17/4/28

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
原子分子物理学および光学

文献へのアクセス

10.1109/INTMAG.2017.8007727

他のファイルとリンク

引用スタイル

Sun, M., Takahashi, S., Kubota, T., Tsukamoto, A., Sonobe, Y., & Takanashi, K. (2017). Underlayer-dependent perpendicular magnetic anisotropy of Co₂Fe_0.4Mn_0.6Si Heusler alloy ultra-thin films. In 2017 IEEE International Magnetics Conference, INTERMAG 2017 [8007727] (2017 IEEE International Magnetics Conference, INTERMAG 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2017.8007727

Underlayer-dependent perpendicular magnetic anisotropy of Co₂Fe_0.4Mn_0.6Si Heusler alloy ultra-thin films. / Sun, M.; Takahashi, S.; Kubota, T. その他.
2017 IEEE International Magnetics Conference, INTERMAG 2017. Institute of Electrical and Electronics Engineers Inc., 2017. 8007727 (2017 IEEE International Magnetics Conference, INTERMAG 2017).

研究成果: Conference contribution

Sun, M, Takahashi, S, Kubota, T, Tsukamoto, A, Sonobe, Y & Takanashi, K 2017, Underlayer-dependent perpendicular magnetic anisotropy of Co₂Fe_0.4Mn_0.6Si Heusler alloy ultra-thin films. in 2017 IEEE International Magnetics Conference, INTERMAG 2017., 8007727, 2017 IEEE International Magnetics Conference, INTERMAG 2017, Institute of Electrical and Electronics Engineers Inc., 2017 IEEE International Magnetics Conference, INTERMAG 2017, Dublin, Ireland, 17/4/24. https://doi.org/10.1109/INTMAG.2017.8007727

Sun M, Takahashi S, Kubota T, Tsukamoto A, Sonobe Y, Takanashi K. Underlayer-dependent perpendicular magnetic anisotropy of Co₂Fe_0.4Mn_0.6Si Heusler alloy ultra-thin films. In 2017 IEEE International Magnetics Conference, INTERMAG 2017. Institute of Electrical and Electronics Engineers Inc. 2017. 8007727. (2017 IEEE International Magnetics Conference, INTERMAG 2017). doi: 10.1109/INTMAG.2017.8007727

@inproceedings{948702c6bdbf496195acc5ac17176bee,

title = "Underlayer-dependent perpendicular magnetic anisotropy of Co2Fe0.4Mn0.6Si Heusler alloy ultra-thin films",

abstract = "Spin transfer torque magnetoresistive random access memory (STT-MRAM) is being developed as a candidate for the next generation memories nowadays.",

author = "M. Sun and S. Takahashi and T. Kubota and A. Tsukamoto and Y. Sonobe and K. Takanashi",

note = "Funding Information: The difference at the bottom interface stated above may lead to the underlayer dependence of the PMA in CFMS thin films. The relatively large Ks in the perpendicularly magnetized Pd underlayer samples is probably induced by the alloying effect at the Pd/CFMS interface as discussed in our previous work [4]. On the other hand, PMA energies at the CFMS/Ru and CFMS/Cr interfaces are small which are insufficient for perpendicular magnetization. This work was partially supported by MEXT-Supported Program for the Strategic Research Foundation at Private Universities, 2013–2017. Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE International Magnetics Conference, INTERMAG 2017 ; Conference date: 24-04-2017 Through 28-04-2017",

year = "2017",

month = aug,

day = "10",

doi = "10.1109/INTMAG.2017.8007727",

language = "English",

series = "2017 IEEE International Magnetics Conference, INTERMAG 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2017 IEEE International Magnetics Conference, INTERMAG 2017",

}

TY - GEN

T1 - Underlayer-dependent perpendicular magnetic anisotropy of Co2Fe0.4Mn0.6Si Heusler alloy ultra-thin films

AU - Sun, M.

AU - Takahashi, S.

AU - Kubota, T.

AU - Tsukamoto, A.

AU - Sonobe, Y.

AU - Takanashi, K.

N1 - Funding Information: The difference at the bottom interface stated above may lead to the underlayer dependence of the PMA in CFMS thin films. The relatively large Ks in the perpendicularly magnetized Pd underlayer samples is probably induced by the alloying effect at the Pd/CFMS interface as discussed in our previous work [4]. On the other hand, PMA energies at the CFMS/Ru and CFMS/Cr interfaces are small which are insufficient for perpendicular magnetization. This work was partially supported by MEXT-Supported Program for the Strategic Research Foundation at Private Universities, 2013–2017. Publisher Copyright: © 2017 IEEE.

PY - 2017/8/10

Y1 - 2017/8/10

N2 - Spin transfer torque magnetoresistive random access memory (STT-MRAM) is being developed as a candidate for the next generation memories nowadays.

AB - Spin transfer torque magnetoresistive random access memory (STT-MRAM) is being developed as a candidate for the next generation memories nowadays.

UR - http://www.scopus.com/inward/record.url?scp=85034662930&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85034662930&partnerID=8YFLogxK

U2 - 10.1109/INTMAG.2017.8007727

DO - 10.1109/INTMAG.2017.8007727

M3 - Conference contribution

AN - SCOPUS:85034662930

T3 - 2017 IEEE International Magnetics Conference, INTERMAG 2017

BT - 2017 IEEE International Magnetics Conference, INTERMAG 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2017 IEEE International Magnetics Conference, INTERMAG 2017

Y2 - 24 April 2017 through 28 April 2017

ER -