TY - GEN
T1 - Unintentional doping effects on atomically-thin Nb-doped M0S2 observed by scanning nonlinear dielectric microscopy
AU - Yamasue, Kohci
AU - Cho, Yasuo
N1 - Publisher Copyright:
©2019 ASM International. All rights reserved.
PY - 2019
Y1 - 2019
N2 - Two-dimensional semiconductors such as atomically-thin M0S2 have recently gained much attention because of their superior material properties fascinating for the future electronic device applications. Here we investigate the nanoscale dominant carrier distribution on atomically-thin natural and Nb- doped M0S2 mechanically exfoliated on SiCVSi substrates by using scanning nonlinear dielectric microscopy. We show that a few-layer natural M0S2 sample is an 11-type semiconductor, as expected, but Nb-doped MoSj, normally considered as a p-type semiconductor, can unexpectedly become an n-typc semiconductor due to strong unintentional electron doping.
AB - Two-dimensional semiconductors such as atomically-thin M0S2 have recently gained much attention because of their superior material properties fascinating for the future electronic device applications. Here we investigate the nanoscale dominant carrier distribution on atomically-thin natural and Nb- doped M0S2 mechanically exfoliated on SiCVSi substrates by using scanning nonlinear dielectric microscopy. We show that a few-layer natural M0S2 sample is an 11-type semiconductor, as expected, but Nb-doped MoSj, normally considered as a p-type semiconductor, can unexpectedly become an n-typc semiconductor due to strong unintentional electron doping.
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M3 - Conference contribution
AN - SCOPUS:85092688450
T3 - Conference Proceedings from the International Symposium for Testing and Failure Analysis
SP - 498
EP - 503
BT - ISTFA 2019 - Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis
PB - ASM International
T2 - 45th International Symposium for Testing and Failure Analysis, ISTFA 2019
Y2 - 10 November 2019 through 14 November 2019
ER -