Unusual temperature dependence of the band structure associated with local atomic distortion in monolayer 1T′-WTe2

The ground state of monolayer 1T′-WTe2 has been a target of intensive debate on whether or not it is a two-dimensional topological insulator (2D TI) associated with exciton formation. We investigated the band structure of an epitaxial monolayer 1T′-WTe2 film grown on graphene/SiC(0001) in a wide temperature range of T=40-400K by angle-resolved photoemission spectroscopy (ARPES). We observed an electron band above the Fermi level (EF) slightly away from the Γ point, together with four hole bands below EF just at the Γ point. This signifies an indirect band gap exceeding 0.1 eV in support of the 2D-TI phase with the inverted band structure. We uncovered an unexpectedly large downward shift of valence bands upon cooling, accompanied with an upward shift of the conduction band. Comparison of the ARPES-derived band structure with first-principles band calculations suggests that the observed band shift is ascribed to the systematic local atomic distortion of tungsten atoms, which should be incorporated into the interpretation of unusual transport properties of 1T′-WTe2.