Variability analysis of TiN FinFET SRAM cell performance and its compensation using vth-controllable independent double-gate FinFET

Kazuhiko Endo, Shin Ichi O'uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara

研究成果: 書籍の章/レポート/Proceedings会議への寄与査読

抄録

Variability of the TiN FinFET SRAM cell performance is comprehensively studied. It is found that the static noise margin (SNM) variation of the SRAM cell is due to the Vth variation of FinFETs caused by the work function variation (WFV) of the TiN metal-gate. It is experimentally demonstrated that the Vth-controllable independent-double-gate (IDG) FinFET technology successfully compensates not only the random variation but also the systematic variation problems in SRAM performance. As a result, IDG-FinFET technology enables 0.5 V SRAM operation with a high cell stability.

本文言語英語
ホスト出版物のタイトルProceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
ページ124-125
ページ数2
DOI
出版ステータス出版済み - 2010
イベント2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 - Hsin Chu, 台湾省、中華民国
継続期間: 2010 4月 262010 4月 28

出版物シリーズ

名前Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

会議

会議2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
国/地域台湾省、中華民国
CityHsin Chu
Period10/4/2610/4/28

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