Variability analysis of TiN FinFET SRAM cell performance and its compensation using vth-controllable independent double-gate FinFET
Kazuhiko Endo, Shin Ichi O'uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara
研究成果: Conference contribution