Visualization of electrons and holes localized in the gate thin film of metal-oxide nitride-oxide semiconductor type flash memory by using scanning nonlinear dielectric microscopy

Koichiro Honda; Yasuo Cho

doi:10.1557/proc-803-gg4.2

Visualization of electrons and holes localized in the gate thin film of metal-oxide nitride-oxide semiconductor type flash memory by using scanning nonlinear dielectric microscopy

Koichiro Honda, Yasuo Cho

電気通信研究所・情報デバイス研究部門

研究成果: Conference article › 査読

1 被引用数 (Scopus)

抄録

We used scanning nonlinear dielectric microscopy to observe the position of electrons and holes in the gate SiO₂-Si₃N ₄SiO₂ (ONO) film of metal-oxide-nitride-oxide semiconductor type Flash memory. The electrons were detected in the Si ₃N₄ part of the ONO film. The holes, on the other hand, were found in the Si₃N₄ film as well as in the bottom SiO₂ film.

本文言語	English
ページ（範囲）	21-26
ページ数	6
ジャーナル	Materials Research Society Symposium - Proceedings
巻	803
DOI	https://doi.org/10.1557/proc-803-gg4.2
出版ステータス	Published - 2003
イベント	Advanced data Storage Materials and Characterization Techniques - Boston, MA, United States 継続期間: 2003 12月 1 → 2004 12月 4

ASJC Scopus subject areas

材料科学（全般）
凝縮系物理学
材料力学
機械工学

文献へのアクセス

10.1557/proc-803-gg4.2

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引用スタイル

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title = "Visualization of electrons and holes localized in the gate thin film of metal-oxide nitride-oxide semiconductor type flash memory by using scanning nonlinear dielectric microscopy",

abstract = "We used scanning nonlinear dielectric microscopy to observe the position of electrons and holes in the gate SiO2-Si3N 4SiO2 (ONO) film of metal-oxide-nitride-oxide semiconductor type Flash memory. The electrons were detected in the Si 3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film.",

author = "Koichiro Honda and Yasuo Cho",

year = "2003",

doi = "10.1557/proc-803-gg4.2",

language = "English",

volume = "803",

pages = "21--26",

journal = "Materials Research Society Symposium - Proceedings",

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note = "Advanced data Storage Materials and Characterization Techniques ; Conference date: 01-12-2003 Through 04-12-2004",

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AU - Honda, Koichiro

AU - Cho, Yasuo

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N2 - We used scanning nonlinear dielectric microscopy to observe the position of electrons and holes in the gate SiO2-Si3N 4SiO2 (ONO) film of metal-oxide-nitride-oxide semiconductor type Flash memory. The electrons were detected in the Si 3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film.

AB - We used scanning nonlinear dielectric microscopy to observe the position of electrons and holes in the gate SiO2-Si3N 4SiO2 (ONO) film of metal-oxide-nitride-oxide semiconductor type Flash memory. The electrons were detected in the Si 3N4 part of the ONO film. The holes, on the other hand, were found in the Si3N4 film as well as in the bottom SiO2 film.

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T2 - Advanced data Storage Materials and Characterization Techniques

Y2 - 1 December 2003 through 4 December 2004

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