X-ray induced insulator-metal transition in a thin film of electron-doped VO2

K. Shibuya, D. Okuyama, R. Kumai, Y. Yamasaki, H. Nakao, Y. Murakami, Y. Taguchi, T. Arima, M. Kawasaki, Y. Tokura

研究成果: Article査読

16 被引用数 (Scopus)


We have observed a persistent x-ray induced insulator-metal transition at low temperature for an epitaxial film of electron-doped VO2, a material as characterized by strong electron-electron and electron-lattice interactions. The volume fraction of the photo-generated metallic patches, ranging from 0 to 100% of the whole film, can be scaled well with the total dose of x-ray irradiation, irrespective of the x-ray intensity. This indicates the monomolecular process of the insulator-metal phase conversion that corresponds to the instantaneous creation of the metallic patch extending over as many as 105 V sites per one x-ray absorbed photon. The typical percolation behavior is observed in the conductivity change with the finely photo-controlled volume ratio of the metallic phase.

ジャーナルPhysical Review B - Condensed Matter and Materials Physics
出版ステータスPublished - 2011 10月 10

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学


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